Large-Signal Characterization of 94 GHz Diamond Based DDR IMPATT Device

In this paper, the large-signal characterization of 94 GHz typeIIb semiconducting diamond based Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) has been carried out by using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation. The simulation is carried out to obtain the large-signal characteristics such as largesignal device admittance, RF power output, DC to RF conversion efficiency, etc of DDR diamond IMPATT device operating at 94 GHz atmospheric window. The results show that the device is capable of delivering a peak RF power output of 7.01 W with 10.18% DC to RF conversion efficiency at a bias current density of 6.0×108 A m-2 and voltage modulation of 60%.